Title :
Gallium arsenide solid state travelling wave amplifier at 8 GHz
Author :
Thompson, Jared J. ; Taylor, M.R.S. ; Thompson, A.M. ; Beaumont, S.P. ; Apsley, N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
3/14/1991 12:00:00 AM
Abstract :
A solid state travelling wave amplifier using interdigitated DC isolated fingers has been fabricated on low doped GaAs using electron beam lithography and has been shown to give 13 dB/mm microwave gain at 7.95 GHz with an applied transverse DC field of 1.5 kV/cm.
Keywords :
III-V semiconductors; electron beam lithography; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 7.95 GHz; GaAs; applied transverse DC field; electron beam lithography; interdigitated DC isolated fingers; microwave gain; solid state travelling wave amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910324
