Title :
Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/
Author :
Wu, Y.H. ; Yang, M.Y. ; Chin, A. ; Chen, W.J. ; Kwei, C.M.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2000 12:00:00 AM
Abstract :
Electrical and reliability properties of ultrathin La2O3 gate dielectric have been investigated. The measured capacitance of 33 /spl Aring/ La2O3 gate dielectric is 7.2 μF/cm2 that gives an effective K value of 27 and an equivalent oxide thickness of 4.8 /spl Aring/. Good dielectric integrity is evidenced from the low leakage current density of 0.06 A/cm2 at -1 V, high effective breakdown field of 13.5 MV/cm, low interface-trap density of 3×10/sup 10/ eV/sup -1//cm2, and excellent reliability with more than 10 years lifetime even at 2 V bias. In addition to high K, these dielectric properties are very close to conventional thermal SiO2.
Keywords :
MIS devices; capacitance; current density; dielectric thin films; interface states; lanthanum compounds; leakage currents; permittivity; semiconductor device breakdown; semiconductor device reliability; semiconductor-insulator boundaries; 10 yr; 2 V; 33 A; 4.8 A; La/sub 2/O/sub 3/-Si; MOS devices; VLSI; capacitance; dielectric integrity; dielectric properties; effective breakdown field; electrical characteristics; high quality gate dielectric; interface-trap density; leakage current density; reliability properties; ultrathin gate dielectric; Capacitance; Current measurement; Dielectric materials; Dielectric measurements; Electric variables; Leakage current; Oxidation; Temperature; Thermal stability; Thickness measurement;
Journal_Title :
Electron Device Letters, IEEE
