A new and improved borderless contact (BLC) structure for high-performance Ti-salicide in sub-quarter micron CMOS devices

Author

Liu, Wen-Chau ; Thei, Kong-Beng ; Wang, Wei-Chou ; Pan, Hsi-jen ; Wuu, Shou-Gwo ; Lei, Ming-Ta ; Wang, Chung-Shu ; Cheng, Shiou-Ying

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

21

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

344

Lastpage

346

Abstract

We demonstrate a new and improved borderless contact (BLC) Ti-salicide process for the fabrication of sub-quarter micron CMOS devices. A low-temperature chemical vapor deposition (CVD) SiO/sub x/N/sub y/ film to act as the selective etching stop layer and the additional n/sup +/ and p/sup +/ source-drain double implant structure (DIS) are employed in the studied device. The additional n/sup +/ and p/sup +/ DIS can reduce the junction leakage current, which is usually enhanced by BLC etching near the edge of shallow trench isolation (STI). The process window is enlarged. Furthermore, the employed low-thermal oxynitride and high deposition rate can improve the salicide thermal stability and avoid the salicide agglomeration.

Keywords

CMOS integrated circuits; ULSI; VLSI; etching; integrated circuit metallisation; thermal stability; titanium compounds; 0.24 to 0.25 micron; BLC Ti-salicide process; SiON; TiSi/sub 2/; borderless contact structure; chemical vapor deposited SiO/sub x/N/sub y/ film; high deposition rate; high-performance Ti-salicide; junction leakage current; low-temperature CVD SiO/sub x/N/sub y/ film; low-thermal oxynitride; salicide thermal stability; selective etching stop layer; shallow trench isolation; source-drain double implant structure; subquarter micron CMOS devices; CMOS process; CMOS technology; Chemical vapor deposition; Etching; Fabrication; Implants; Leakage current; MOS devices; Semiconductor films; Thermal stability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.847375

Filename

847375