• DocumentCode
    1348518
  • Title

    Enhancement of CF4 and O2 reactive ion etching resistance of poly(butene-1 sulfone) by N2 plasma pretreatment

  • Author

    Loong, W.A. ; Chang, H.W.

  • Author_Institution
    Inst. of Appl. Chem., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    27
  • Issue
    6
  • fYear
    1991
  • fDate
    3/14/1991 12:00:00 AM
  • Firstpage
    541
  • Lastpage
    542
  • Abstract
    The resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained.
  • Keywords
    electron resists; polymers; sputter etching; surface treatment; N 2; O 2; PBS; original thickness; plasma pretreatment; poly(butene-1 sulfone); reactive ion etching resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910340
  • Filename
    84755
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1348518