Title :
Enhancement of CF4 and O2 reactive ion etching resistance of poly(butene-1 sulfone) by N2 plasma pretreatment
Author :
Loong, W.A. ; Chang, H.W.
Author_Institution :
Inst. of Appl. Chem., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
3/14/1991 12:00:00 AM
Abstract :
The resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained.
Keywords :
electron resists; polymers; sputter etching; surface treatment; N 2; O 2; PBS; original thickness; plasma pretreatment; poly(butene-1 sulfone); reactive ion etching resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910340
