DocumentCode :
1348620
Title :
Improved Resistive Switching of Textured ZnO Thin Films Grown on Ru Electrodes
Author :
Liu, Zi-Jheng ; Chou, Jen-Chun ; Wei, Shih-Yuan ; Gan, Jon-Yiew ; Yew, Tri-Rung
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume :
32
Issue :
12
fYear :
2011
Firstpage :
1728
Lastpage :
1730
Abstract :
This letter investigates the unipolar resistive switching behaviors of sputtered ZnO thin films by changing the electrode combinations of Pt and Ru, creating four sandwich structures of Pt/ZnO/Pt, Pt/ZnO/Ru, Ru/ZnO/Pt, and Ru/ZnO/Ru. Only the Pt/ZnO/Ru devices in this letter achieved favorable resistive switching characteristics, including good endurance performance, narrow distributions in switching parameters, high on/off ratio (>; 150), and clear difference between the set and reset voltages (~1 V). This may be attributed to the low oxygen affinity of Pt electrodes and the strong c-axis texture of ZnO thin films grown on Ru electrodes.
Keywords :
electrical resistivity; electrodes; platinum; ruthenium; sandwich structures; semiconductor thin films; zinc compounds; Pt-ZnO-Pt; Pt-ZnO-Ru; Ru electrode; Ru-ZnO-Pt; Ru-ZnO-Ru; ZnO; sandwich structure; sputtered ZnO thin films; textured ZnO thin film; unipolar resistive switching; Anodes; Resistance; Silicon; Switches; Voltage measurement; Zinc oxide; Nonvolatile memory; ZnO; resistance random access memory; resistive switching;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2167710
Filename :
6043863
Link To Document :
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