Title :
SPICE Behavioral Model of the Tunneling Field-Effect Transistor for Circuit Simulation
Author :
Hong, Yibin ; Yang, Yue ; Yang, Litao ; Samudra, Ganesh ; Heng, Chun-Huat ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
The tunneling field-effect transistor (TFET) is an alternative device for deep-submicrometer CMOS with very good short channel and leakage characteristics. In this brief, a SPICE behavioral model that well captures the I- V characteristics and the parasitic capacitance of the n-channel TFET is proposed to facilitate efficient circuit design and simulation. The validity of the model is verified with technology computer-aided design (TCAD) simulation. The accuracy is within 10% and is of an order of magnitude faster than the TCAD.
Keywords :
circuit simulation; field effect transistors; technology CAD (electronics); SPICE behavioral model; circuit simulation; parasitic capacitance; technology computer-aided design simulation; tunneling field-effect transistor; Behavioral modeling; SPICE simulation; inverter; tunneling field-effect transistor (TFET);
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2009.2035274
