Title :
The Effect of Random Dopant Fluctuation on Specific Contact Resistivity
Author :
Vega, Reinaldo A. ; Lee, Vincent C. ; Liu, Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
An analytical model is developed to describe the effect of random dopant fluctuation (RDF) on specific contact resistivity ¿c. This model accounts for Schottky-barrier (SB) lowering due to image force, interface dipole, and bandgap narrowing effects and is calibrated to TCAD models and previously published experimental results. The contact parameters considered are contact area, SB height, and dopant concentration. The presented analysis suggests that ¿c variation due to RDF will not be significant up to the end of the CMOS roadmap.
Keywords :
CMOS integrated circuits; contact resistance; semiconductor doping; CMOS roadmap; SB height; Schottky-barrier lowering; TCAD models; bandgap narrowing effects; contact area; dopant concentration; image force; interface dipole; random dopant fluctuation; specific contact resistivity; Analytical models; Conductivity; Contact resistance; FinFETs; Fluctuations; MOSFET circuits; Resource description framework; Schottky barriers; Semiconductor device modeling; Semiconductor process modeling; Dopant segregation; Schottky barrier (SB); random dopant fluctuation (RDF); specific contact resistivity;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2035027
