• DocumentCode
    1349454
  • Title

    The Effect of Random Dopant Fluctuation on Specific Contact Resistivity

  • Author

    Vega, Reinaldo A. ; Lee, Vincent C. ; Liu, Tsu-Jae King

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
  • Volume
    57
  • Issue
    1
  • fYear
    2010
  • Firstpage
    273
  • Lastpage
    281
  • Abstract
    An analytical model is developed to describe the effect of random dopant fluctuation (RDF) on specific contact resistivity ¿c. This model accounts for Schottky-barrier (SB) lowering due to image force, interface dipole, and bandgap narrowing effects and is calibrated to TCAD models and previously published experimental results. The contact parameters considered are contact area, SB height, and dopant concentration. The presented analysis suggests that ¿c variation due to RDF will not be significant up to the end of the CMOS roadmap.
  • Keywords
    CMOS integrated circuits; contact resistance; semiconductor doping; CMOS roadmap; SB height; Schottky-barrier lowering; TCAD models; bandgap narrowing effects; contact area; dopant concentration; image force; interface dipole; random dopant fluctuation; specific contact resistivity; Analytical models; Conductivity; Contact resistance; FinFETs; Fluctuations; MOSFET circuits; Resource description framework; Schottky barriers; Semiconductor device modeling; Semiconductor process modeling; Dopant segregation; Schottky barrier (SB); random dopant fluctuation (RDF); specific contact resistivity;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2009.2035027
  • Filename
    5345817
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1349454