Title :
Optimization of power MOSFET body diode for speed and ruggedness
Author :
Yilmaz, Hamza ; Owyang, King ; Shafer, Peter O. ; Borman, Claudia C.
Author_Institution :
Siliconix Inc., Santa Clara, CA, USA
Abstract :
The built-in diode in the power MOSFET can be used as an integral flyback diode in a power electronics circuit. However, if the power MOSFET is not optimized for utilization of the built-in diode, it can catastrophically fail during the diode mode of operation. A failure mechanism is proposed and discussed. It is found that through improved design with optimized cell geometry, vertical device structure, and electron irradiation, a rugged power MOSFET can be made such that the built-in diode will operate successfully as a flyback diode without inducing failure to the power MOSFET device
Keywords :
failure analysis; insulated gate field effect transistors; power transistors; semiconductor diodes; built-in diode; electron irradiation; failure mechanism; integral flyback diode; optimized cell geometry; power MOSFET body diode; power electronics circuit; ruggedness; vertical device structure; Bipolar transistors; Design optimization; Failure analysis; Geometry; Industry Applications Society; MOSFET circuits; Power MOSFET; Power electronics; Semiconductor diodes; Voltage;
Journal_Title :
Industry Applications, IEEE Transactions on
