Title :
A case study of low-noise amplifier design for 2.65GHz wireless system using MOSFET BSIM4 series and CNTFET
Author_Institution :
Electron. & Telecommun. Eng. Dept., Jadavpur Univ., Kolkata, India
Abstract :
Low power LNA design for high frequency wireless application is one of the challenging tasks in present scenario of VLSI. The major components of noise in amplifier are incorporated into flicker noise and thermal noise. In this paper the main concentration is given on a comparative study for a single ended LNA in the platform of 130nm to 22nm models of BSIM4 series and Verilog based CNTFET. Nose figure, reflection coefficients and gain of LNA are taken as a subject of matter for the comparison.
Keywords :
MOSFET circuits; carbon nanotube field effect transistors; flicker noise; integrated circuit design; low noise amplifiers; low-power electronics; thermal noise; MOSFET BSIM4 series; VLSI; Verilog based CNTFET; flicker noise; frequency 2.65 GHz; high frequency wireless application; low power LNA design; low-noise amplifier design; nose figure; reflection coefficients; size 130 nm to 22 nm; thermal noise; CNTFETs; Inductors; Integrated circuit modeling; Noise; Noise figure; Reflection coefficient; Wireless communication; Inductor Degenerated; Reflection Coefficient; Resonant frequency; Scattering Parameter; Transmission Gain;
Conference_Titel :
Automation, Control, Energy and Systems (ACES), 2014 First International Conference on
Conference_Location :
Hooghy
Print_ISBN :
978-1-4799-3893-3
DOI :
10.1109/ACES.2014.6807985
