Analytical modeling of dual-gate HFET´s

Author

Long, Wei ; Lee, Li-heng ; Kohn, Erhard ; Chin, Ken K.

Author_Institution

Dept. of Electr. Eng., New Jersey Inst. of Technol., Newark, NJ, USA

Volume

16

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

1409

Lastpage

1417

Abstract

A simple analytical dual-gate hetero-structure field-effect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced g_m/g_d and C_gs/C_dg ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results

Keywords

equivalent circuits; microwave field effect transistors; semiconductor device models; two-dimensional electron gas; DGHFET; I-V characteristics; bias conditions; dual-gate HFET; model; single-gate counterparts; small signal behavior; small signal parameters; Analytical models; Circuits; Electron devices; HEMTs; MODFETs; Microwave FETs; Microwave devices; Physics; Research and development; Signal analysis;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.664223

Filename

664223