DocumentCode :
1349755
Title :
On-Orbit Error Rates of RHBD SRAMs: Comparison of Calculation Techniques and Space Environmental Models With Observed Performance
Author :
Bogorad, Alexander L. ; Likar, Justin J. ; Lombardi, Robert E. ; Stone, Stephen E. ; Herschitz, Roman
Author_Institution :
Lockheed Martin Space Syst., Newtown, PA, USA
Volume :
58
Issue :
6
fYear :
2011
Firstpage :
2804
Lastpage :
2806
Abstract :
SEU data for more than 250 equivalent on-orbit SRAM device years is compared with upset rate calculations using various environmental models and contributions of both direct ionization and nuclear interactions.
Keywords :
SRAM chips; error statistics; ionisation; radiation hardening (electronics); RHBD SRAM; SEU data; calculation techniques; direct ionization; nuclear interactions; on-orbit SRAM device; on-orbit error rates; space environmental models; upset rate calculations; CMOS integrated circuits; Protons; Radiation effects; SRAM chips; Single event upset; Space vehicles; Radiation effects; single event upset (SEU); space radiation;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2167242
Filename :
6044740
Link To Document :
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