DocumentCode :
1350028
Title :
Wetting-Layer-Pumped Continuous-Wave Surface-Emitting Quantum-Dot Laser
Author :
Wilcox, Keith G. ; Kbashi, Hani J. ; Quarterman, Adrian H. ; Morris, Oliver J. ; Apostolopoulos, Vasilis ; Henini, Mohamed ; Tropper, Anne C.
Author_Institution :
Sch. of Phys. & Astron., Univ. of Southampton, Southampton, UK
Volume :
24
Issue :
1
fYear :
2012
Firstpage :
37
Lastpage :
39
Abstract :
Quantum-dot vertical-external-cavity surface-emitting lasers (QD VECSELs) are of interest due to their large inhomogeneous gain spectrum and the potential for temperature insensitivity and low threshold. We report a QD VECSEL which is wetting-layer-pumped using a 915-nm diode laser, reducing the quantum defect compared to barrier pumping. A slope efficiency of 56% relative to absorbed pump power was measured from an unprocessed sample with a heat-sink temperature of -30 °C, 1.75 × higher than when barrier pumped using an 830-nm pump diode.
Keywords :
heat sinks; laser cavity resonators; optical pumping; quantum dot lasers; surface emitting lasers; wetting; VECSEL; barrier pumping; diode laser; heat-sink temperature; inhomogeneous gain spectrum; pump diode; quantum defect; slope efficiency; surface-emitting quantum-dot laser; temperature -30 degC; temperature insensitivity; vertical-external-cavity surface-emitting lasers; wavelength 830 nm; wavelength 915 nm; wetting-layer-pumped continuous-wave laser; Heat pumps; Laser excitation; Pump lasers; Quantum dot lasers; Vertical cavity surface emitting lasers; Optically pumped; quantum dot (QD); semiconductor laser; vertical-external-cavity surface-emitting laser (VECSEL); wetting layer;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2171944
Filename :
6045318
Link To Document :
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