DocumentCode
1350055
Title
Analysis and Modeling of Thermomechanically Improved Silver-Sintered Die-Attach Layers Modified by Additives
Author
Heuck, Nicolas ; Langer, Armin ; Stranz, Andrej ; Palm, Gerhard ; Sittig, Roland ; Bakin, Andrey ; Waag, Andreas
Author_Institution
Inst. of Semicond. Technol., Braunschweig Univ. of Technol., Braunschweig, Germany
Volume
1
Issue
11
fYear
2011
Firstpage
1846
Lastpage
1855
Abstract
The pressure-assisted sintering of a sub-micrometer silver paste-sometimes called “silver-sintering” or “low temperature joining technique (LTJT)”-is already used in many power electronics industry applications and provides die-attach layers with excellent mechanical, electrical, and thermal properties. The present challenge is to fit both the coefficient of thermal expansion (CTE) and the mechanical properties of the die-attach layer to the characteristics of chip and substrate to reduce the thermal stress occurring in the attach layer during temperature cycling. After evaluating the impact of the CTE of the sintered die-attach layer on the thermomechanical stress in a whole chip-to-substrate system, we demonstrate that adding special filling materials like SiC or h-BN particles to the silver-powder leads to a significant reduction of the CTE. Further measurements show that thereby the mechanical stability and the electrical conductivity are reduced in an acceptable range. In order to provide a tool for predicting the influence of additives on the LTJT layers´ elasticity and thermal expansion, these properties are modeled based on the amount and type of the additive. Finally, the resulting stress reduction caused by implementation of the modified sinter-layers is estimated by employing finite elements method simulation.
Keywords
additives; electrical conductivity; electronics industry; finite element analysis; joining processes; mechanical stability; microassembling; silver; sintering; thermal expansion; thermal stresses; CTE; LTJT layers; chip-to-substrate system; coefficient of thermal expansion; die-attach layers; electrical conductivity; electrical property; filling materials; finite element method simulation; low temperature joining technique; mechanical property; mechanical stability; modified sinter-layers; power electronics industry applications; silver-powder; stress reduction; thermal property; thermal stress; thermomechanically improved silver-sintered die-attach layers; Additives; Conductivity; Silicon carbide; Stress measurement; Thermal expansion; Young´s modulus; Coefficient of thermal expansion; low temperature joining technique; modeling; porous materials;
fLanguage
English
Journal_Title
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
2156-3950
Type
jour
DOI
10.1109/TCPMT.2011.2167154
Filename
6045323
Link To Document