DocumentCode :
1350157
Title :
Reducing MOSFET 1/f noise and power consumption by switched biasing
Author :
Klumperink, Eric A M ; Gierkink, Sander L J ; Van Der Wel, Arnoud P. ; Nauta, Bram
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Volume :
35
Issue :
7
fYear :
2000
fDate :
7/1/2000 12:00:00 AM
Firstpage :
994
Lastpage :
1001
Abstract :
Switched biasing is proposed as a technique for reducing the 1/f noise in MOSFET´s. Conventional techniques, such as chopping or correlated double sampling, reduce the effect of 1/f noise in electronic circuits, whereas the switched biasing technique reduces the 1/f noise itself. Whereas noise reduction techniques generally lead to more power consumption, switched biasing can reduce the power consumption. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its intrinsic 1/f noise. As the 1/f noise is reduced at its physical roots, high frequency circuits, in which 1/f noise is being upconverted, can also benefit. This is demonstrated by applying switched biasing in a 0.8 /spl mu/m CMOS sawtooth oscillator. By periodically switching off the bias currents, during time intervals that they are not contributing to the circuit operation, a reduction of the 1/f noise induced phase noise by more than 8 dB is achieved, while the power consumption is also reduced by 30%.
Keywords :
1/f noise; CMOS integrated circuits; MOSFET; flicker noise; integrated circuit noise; interference suppression; low-power electronics; phase noise; relaxation oscillators; semiconductor device noise; switching; timing jitter; waveform generators; 0.8 micron; 1/f noise reduction; CMOS sawtooth oscillator; MOSFET 1/f noise; high frequency circuits; phase noise reduction; power consumption reduction; switched biasing; Circuit noise; Electronic circuits; Energy consumption; Frequency; MOSFET circuits; Noise reduction; Phase noise; Power MOSFET; Sampling methods; Switching circuits;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.848208
Filename :
848208
Link To Document :
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