• DocumentCode
    1350204
  • Title

    Analysis of an FET amplifier using power-dependent S-parameters

  • Author

    Umeda, H. ; Nakajima, M.

  • Author_Institution
    Dept. of Electr. Eng., Fukui Univ., Japan
  • Volume
    135
  • Issue
    4
  • fYear
    1988
  • fDate
    8/1/1988 12:00:00 AM
  • Firstpage
    162
  • Lastpage
    166
  • Abstract
    The paper describes a method to derive large-signal S-parameters as functions of the output power with application to calculating the large-signal power gain of an FET amplifier. The S-parameter S22 of a microwave power FET is used to describe the nonlinearity of its large-signal output impedance based on which the output at a given load is determined from the measured data. The large-signal S-parameters of the FET can be expressed as a quadratic function of the output power, and are used to compute the gain compression effect of the FET amplifier. This is found to be in good agreement with experimental results
  • Keywords
    S-parameters; field effect transistor circuits; microwave amplifiers; nonlinear network analysis; power amplifiers; solid-state microwave circuits; FET amplifier; gain compression effect; large-signal S-parameters; large-signal power gain; microwave power FET; output impedance; power-dependent S-parameters;
  • fLanguage
    English
  • Journal_Title
    Electronic Circuits and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0143-7089
  • Type

    jour

  • Filename
    6644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1350204