Investigation on low-voltage low-power silicon bipolar design topology for high-speed digital circuits

Author

Schuppener, Gerd ; Pala, Costantino ; Mokhtari, Mehran

Author_Institution

Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden

Volume

35

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

1051

Lastpage

1054

Abstract

This paper investigates a bipolar design topology which is suitable to operate from a voltage supply well below 1.5 V, while maintaining the ability of high frequency operation. The topology has been applied in the design of different divide-by-4 circuits, utilizing a 20-GHz 0.6-/spl mu/m Si bipolar technology. The different versions featured slight modifications in the architecture of the logic cells and the influence on the frequency and supply voltage range of operation has been investigated. Measurements have shown operation from 1.0-V supply voltage and up to 4.2-GHz input frequency to 1.5 V and up to 6 GHz. The power consumption is approximately 0.3 mW/latch and 1.2 mW/latch, respectively.

Keywords

bipolar logic circuits; dividing circuits; elemental semiconductors; high-speed integrated circuits; integrated circuit design; integrated circuit measurement; low-power electronics; silicon; 0.6 micron; 1.0 to 1.5 V; 20 GHz; 4.2 to 6 GHz; Si; divide-by-4 circuits; high frequency operation; high-speed digital circuits; input frequency; logic cells; low-power bipolar design topology; power consumption; supply voltage range; Circuit topology; Digital circuits; Energy consumption; Frequency; Latches; Logic; Low voltage; Mirrors; Silicon; Temperature;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.848216

Filename

848216