• DocumentCode
    1350356
  • Title

    Low-dropout voltage reference: an approach to low-temperature-sensitivity architectures with high drive capability

  • Author

    Aminzadeh, Hamed ; Lotfi, Reza ; Mafinezhad, K.

  • Author_Institution
    Dept. of Electr. Eng., Ferdowsi Univ. of Mashhad, Mashhad, Iran
  • Volume
    45
  • Issue
    24
  • fYear
    2009
  • Firstpage
    1200
  • Lastpage
    1201
  • Abstract
    A modified circuit topology for voltage references capable of providing very high load current with low-temperature-sensitivity output voltage is presented. Employing a proportional-to-absolute-temperature current source and a complementary-to-absolute-temperature voltage source in a novel closed-loop configuration, the output voltage can be tuned over a wide range of voltages lower or higher than the silicon bandgap voltage. These features make the configuration a promising competitor for low-dropout regulators. A possible implementation of the proposed topology in 0.18 mum technology shows that the simulated 0.9 and 1.3 V voltage references have fast and stable operation for load currents up to 100 mA. The temperature coefficient for both design cases is smaller than 37 ppm/degC.
  • Keywords
    low-power electronics; voltage regulators; closed loop configuration; low dropout regulator; low dropout voltage reference; low temperature sensitivity architecture; modified circuit topology; silicon bandgap voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.1531
  • Filename
    5349267