Title :
A Low-Power, Low-Voltage WBAN-Compatible Sub-Sampling PSK Receiver in 65 nm CMOS
Author :
Jiao Cheng ; Nan Qi ; Chiang, Patrick Yin ; Natarajan, Arutselvan
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
Abstract :
A PSK receiver (RX) is proposed that employs a digital-intensive architecture based on sub-sampling, Q-enhancement, and digital IF to enable low-power (1.3 mW) and low-voltage (0.6 V) operation. Implemented in 65 nm CMOS, this work is compatible with the IEEE 802.15.6 (WBAN) narrowband physical layer specification and achieves -91 dBm and -96 dBm sensitivity at 10-3 BER for π/4-DQPSK and π/2-DBPSK modulation respectively. The proposed highly digital architecture and supply voltage scaling lead to a 3x improvement in RX energy efficiency and minimize silicon area consumption (~ 0.35 mm2 in 65 nm CMOS) while achieving state-of-the-art sensitivity. While this implementation focuses on WBAN demodulation, the proposed architecture and circuit techniques are generally applicable to RX targeting ultra-low power consumption for sensor networks.
Keywords :
CMOS integrated circuits; body area networks; differential phase shift keying; low-power electronics; quadrature phase shift keying; radio receivers; π-2-DBPSK modulation; π-4-DQPSK modulation; IEEE 802.15.6 narrowband physical layer specification; PSK receiver; Q-enhancement; RX energy efficiency; WBAN demodulation; WBAN narrowband physical layer specification; digital IF; digital-intensive architecture; power 1.3 mW; sensor networks; size 65 nm; sub-sampling; supply voltage scaling; ultra-low power consumption; voltage 0.6 V; CMOS integrated circuits; Gain; Noise; Power demand; Radio frequency; Standards; Tuning; $pi/2$-DBPSK; $pi/4$-DQPSK; ${rm Q}$-enhancement; CMOS; PSK; WBAN; digital IF; digital RF; low power; low voltage; narrowband; receiver (RX); sub-sampling;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2014.2362840