DocumentCode
1350522
Title
Thermo-structural model of stacked field-programmable gate arrays with through-silicon vias
Author
Zhang, Chenghui ; Dasu, Aravind ; Li, Luoqing
Author_Institution
Micron Res. Center, Utah State Univ., Logan, UT, USA
Volume
45
Issue
24
fYear
2009
Firstpage
1236
Lastpage
1238
Abstract
A new 3-D full-scale thermo-structural finite element model of two-stack field-programmable gate arrays (FPGAs) with through-silicon vias (TSVs), which is developed from an experimentally validated single-stack FPGA model, is proposed. Typical 3-D distributions and evolutions of temperature and von Mises stress on both the active layers and TSVs are presented.
Keywords
field programmable gate arrays; finite element analysis; silicon; thermal analysis; 3D full-scale thermo-structural finite element model; single-stack FPGA model; stacked field-programmable gate arrays; thermo-structural model; through-silicon vias; two-stack field-programmable gate arrays; von Mises stress;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2009.1778
Filename
5349291
Link To Document