GaN n- and p-type Schottky diodes: Effect of dry etch damage

Author

Cao, X.A. ; Pearton, S.J. ; Dang, G.T. ; Zhang, A.P. ; Ren, F. ; Van Hove, J.M.

Author_Institution

Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA

Volume

47

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

1320

Lastpage

1324

Abstract

The reverse breakdown voltage (V_B) and forward turn-on voltage (V_F) of n- and p-GaN Schottky diodes were used to examine the effects of Cl₂/Ar and Ar plasma damage. Even short plasma exposures (4 secs) produced large changes in both V_B and V_F, with ion mass being a critical factor in determining the magnitude of the changes. The damage depth was established to be 500-600 Å and the damaged material could be removed in boiling NaOH solutions, producing a full recovery of the diode properties. Annealing at 700 to 800°C under N₂ produced only a partial recovery of V_B and V_F

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; semiconductor device breakdown; sputter etching; wide band gap semiconductors; 700 to 800 C; GaN; GaN Schottky diode; N₂ annealing; NaOH solution treatment; device damage; dry etching; forward turn-on voltage; plasma etching; reverse breakdown voltage; Annealing; Argon; Dry etching; Gallium nitride; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma properties; Schottky diodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.848271

Filename

848271