• DocumentCode
    1350673
  • Title

    Favourable photovoltaic effects in InGaN pin homojunction solar cell

  • Author

    Cai, X.-M. ; Zeng, S.-W. ; Zhang, Bao-Ping

  • Author_Institution
    Dept. of Phys., Xiamen Univ., Xiamen, China
  • Volume
    45
  • Issue
    24
  • fYear
    2009
  • Firstpage
    1266
  • Lastpage
    1267
  • Abstract
    InGaN pin homojunction solar cells with different In content (x = 0.02/ 0.12/0.15) have been fabricated. The measured open-circuit voltages (Voc) are 2.24, 1.34 and 0.96 V, respectively. All the devices exhibit large fill factors of more than 64% and enhanced response in the short wavelength region, suggesting the high potential of InGaN-based pin homojunction solar cells.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; p-n junctions; photovoltaic effects; solar cells; wide band gap semiconductors; InGaN; fill factors; open-circuit voltage; photovoltaic effects; pin homojunction solar cells; voltage 0.96 V; voltage 1.34 V; voltage 2.24 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.2094
  • Filename
    5349311
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1350673