DocumentCode :
1350680
Title :
Optical properties of ZnSe1-xOx epilayers
Author :
Chen, Ching-Yi ; Chyi, Jen-Inn ; Chao, C.-K. ; Wu, Chao-Hsin
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Volume :
45
Issue :
24
fYear :
2009
Firstpage :
1267
Lastpage :
1269
Abstract :
ZnSeO alloys with O content up to 7.0% have been successfully grown on GaAs by molecular beam epitaxy. Low temperature band edge photoluminescence of ZnSeO shows redshift with increasing O content. An anomalous temperature-dependent photoluminescence behaviour is observed on ZnSe0.973O0.027 and is attributed to the delocalisation of local excitons.
Keywords :
II-VI semiconductors; excitons; molecular beam epitaxial growth; photoluminescence; red shift; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; zinc compounds; GaAs; ZnSe0.973O0.027-GaAs; delocalisation; epilayer growth; local excitons; low temperature band edge photoluminescence; molecular beam epitaxy; optical properties; redshift;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.9315
Filename :
5349312
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1350680
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