Effect of vacuum ultraviolet radiation on the gap fill properties of Teflon amorphous fluoropolymer film deposited by direct liquid injection

Author

Parihar, V. ; Singh, R. ; Sharangpani, R. ; Russell, S.D. ; Young, C.A.

Author_Institution

Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA

Volume

47

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

1463

Lastpage

1465

Abstract

In this work, the roles of vacuum ultraviolet (VUV) photons in improving the gap fill properties of a low dielectric constant (K) material (Teflon amorphous fluoropolymer, K=1.93) deposited by direct liquid injection assisted rapid photothermal chemical vapor deposition technique are discussed. A qualitative explanation is presented wherein it is proposed that high-energy photons provide photoexcitation of the species involved in the deposition of Teflon AF^TM, thereby lowering the activation energy and migrational enthalpy required for surface diffusion leading to a higher molecular mobility on the patterned surface

Keywords

CVD coatings; amorphous state; dielectric thin films; integrated circuit interconnections; permittivity; photoexcitation; polymer films; surface diffusion; ultraviolet radiation effects; Teflon AF; Teflon amorphous fluoropolymer film; VUV photons; activation energy reduction; chemical vapor deposition; direct liquid injection; gap fill properties; interconnect dielectric applications; low dielectric constant material; migrational enthalpy; molecular mobility; patterned surface; photoexcitation; rapid photothermal CVD technique; surface diffusion; vacuum ultraviolet radiation; Amorphous materials; Chemical vapor deposition; Dielectric constant; Dielectric materials; Integrated circuit interconnections; Silicon; Sputter etching; Surface topography; Temperature control; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.848292

Filename

848292