Title :
A novel lateral bipolar transistor with 67 GHz fmax on thin-film SOI for RF analog applications
Author :
Nii, Hideaki ; Yamada, Takashi ; Inoh, Kazumi ; Shino, Tomoaki ; Kawanaka, Shigeru ; Yoshimi, Makoto ; Katsumata, Yasuhiro
Author_Institution :
Syst. LSI Res. & Dev. Center, Toshiba Corp., Yokohama, Japan
fDate :
7/1/2000 12:00:00 AM
Abstract :
In this paper, a novel lateral bipolar transistor on thin film silicon-on-insulator (SOI) is presented. With a small emitter size of 0.12×3.0 μm2, low base resistance of 270 Ω due to a novel Co silicided base electrode and low base-collector parasitic capacitances of 1.4 fF due to SOI material, it achieves the highest f max of 67 GHz among SOI bipolar transistors. Also, the low emitter-base capacitance of 1.5 fF and the low collector-substrate capacitance of 2.5 fF are realized. The transistor has a simple structure, which is fabricated with simplified processes without any new sophisticated technologies, excluding trench isolation and epitaxial base used in current bipolar transistors. This can lower the fabrication cost of transistors. We have demonstrated the possibility of lateral bipolar transistor on thin film SOI as next-generation device for RF analog applications
Keywords :
UHF bipolar transistors; UHF integrated circuits; bipolar analogue integrated circuits; capacitance; isolation technology; silicon-on-insulator; 0.12 micron; 1.4 fF; 1.5 fF; 2.5 fF; 270 ohm; 67 GHz; RF analog applications; Si; base resistance; base-collector parasitic capacitances; collector-substrate capacitance; emitter size; epitaxial base; fabrication cost; lateral bipolar transistor; next-generation device; thin-film SOI; trench isolation; Bipolar transistors; Costs; Electrodes; Fabrication; Isolation technology; Parasitic capacitance; Semiconductor thin films; Silicon on insulator technology; Thin film devices; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
