DocumentCode
1350961
Title
A Theoretical Calculation of the Impact of GaN Cap and 
Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a
Author
Liu, Guipeng ; Wu, Ju ; Lu, Yanwu ; Zhang, Biao ; Li, Chengming ; Sang, Ling ; Song, Yafeng ; Shi, Kai ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, QinSheng ; Wang, Zhanguo
Author_Institution
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Volume
58
Issue
12
fYear
2011
Firstpage
4272
Lastpage
4275
Abstract
The electron mobility in a 2-D electron gas in a GaN/AlxGa1-xN/GaN heterostructure limited by GaN cap-thickness-fluctuation (CTF) and AlxGa1-xN barrier thickness-fluctuation (BTF) scattering is calculated considering the strong spontaneous and piezoelectric polarization. The calculated results reveal that the electron mobility limited by CTF and BTF scattering is lower than that limited by interface roughness scattering if the AlxGa1-xN barrier layer is thin enough (several nanometers).
Keywords
III-V semiconductors; aluminium compounds; current fluctuations; dielectric polarisation; electron mobility; gallium compounds; interface roughness; piezoelectricity; semiconductor heterojunctions; surface scattering; two-dimensional electron gas; wide band gap semiconductors; 2DEG; GaN-AlxGa1-xN-GaN; barrier-thickness-fluctuation scattering; cap-thickness-fluctuation scattering; electron mobility; heterostructure; interface roughness scattering; piezoelectric polarization; spontaneous polarization; two-dimensional electron gas; Aluminum gallium nitride; Electron mobility; Gallium nitride; HEMTs; MODFETs; Scattering; Silicon; Cap-thickness-fluctuation (CTF) and barrier-thickness fluctuation (BTF) scattering; interface roughness scattering; two dimensional electron gas (2DEG);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2167334
Filename
6046120
Link To Document