A Low-Noise Amplifier With Tunable Interference Rejection for 3.1- to 10.6-GHz UWB Systems

Author

Park, Bonghyuk ; Choi, Sangsung ; Hong, Songcheol

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

20

Issue

1

fYear

2010

Firstpage

40

Lastpage

42

Abstract

An ultrawideband common-gate low noise amplifier with tunable interference rejection is presented. The proposed LNA embeds a tunable active notch filter to eliminate interferer at 5-GHz WLAN and employs a common-gate input stage and dual-resonant loads for wideband implementation. This LNA has been fabricated in a 0.18-??m CMOS process. The measured maximum power gain is 13.2 dB and noise figure is 4.5-6.2 dB with bandwidth of 3.1-10.6 GHz. The interferer rejection is 8.2 dB compared to the maximum gain and 7.6 dB noise figure at 5.2 GHz , respectively. The measured input P1dB is -11 dBm at 10.3 GHz. It consumes 12.8 mA from 1.8-V supply voltage.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; active filters; field effect MMIC; interference suppression; low noise amplifiers; notch filters; ultra wideband communication; wireless LAN; CMOS process; LNA; UWB system; WLAN; bandwidth 3.1 GHz to 10.6 GHz; current 12.8 mA; frequency 10.3 GHz; frequency 5 GHz; gain 13.2 dB; interference elimination; low-noise amplifier; noise figure 4.5 dB to 6.2 dB; noise figure 7.6 dB; size 0.18 mum; tunable active notch filter; tunable interference rejection; ultrawideband common-gate amplifier; voltage 1.8 V; CMOS; common-gate stage; low-noise amplifier; tunable interference rejection; ultrawideband;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2009.2035963

Filename

5350392