Title :
Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)
Author :
Bag, Ankush ; Mukhopadhyay, Partha ; Ghosh, Saptarsi ; Kumar, Rahul ; Dinara, Syed Mukulika ; Kabi, Sanjib ; Chakraborty, Apurba ; Biswas, Dhrubes
Author_Institution :
Adv. Technol. Dev. Centre, Indian Inst. of Technol., Kharagpur, Kharagpur, India
fDate :
Feb. 28 2014-March 2 2014
Abstract :
Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium compounds; high electron mobility transistors; phonons; two-dimensional electron gas; wide band gap semiconductors; 2DEG channel; Al2O3; AlGaN-GaN; AlGaN-GaN HEMT gain; AlGaN-GaN HEMT linearity; carrier mobility; channel self heating effect; drain bias; drain current; electron scattering; gate bias; longitudinal electric field effect; maximum gain; phonon generation; sapphire (0001) substrate; Aluminum gallium nitride; Gallium nitride; HEMTs; Linearity; Logic gates; MODFETs; Substrates; AlGaN/GaN Sapphire; Gain; HEMT; Linearity;
Conference_Titel :
Students' Technology Symposium (TechSym), 2014 IEEE
Conference_Location :
Kharagpur
Print_ISBN :
978-1-4799-2607-7
DOI :
10.1109/TechSym.2014.6808083
