Title :
Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices
Author :
Shrivastava, Mayank ; Baghini, Maryam Shojaei ; Gossner, Harald ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
In this paper, the optimization issues of various drain-extended devices are discussed for input/output applications. The mixed-signal performance, impact of process variations, and gate oxide reliability of these devices are compared. Lightly doped drain MOS (LDDMOS) was found to have a moderate performance advantage as compared to shallow trench isolation (STI) and non-STI drain-extended MOS (DeMOS) devices. Non-STI DeMOS devices have improved circuit performance but suffer from the worst gate oxide reliability. Incorporating an STI region underneath the gate-drain overlap improves the gate oxide reliability, although it degrades the mixed-signal characteristics of the device. The single-halo nature of DeMOS devices has been shown to be effective in suppressing the short-channel effects.
Keywords :
MOS integrated circuits; integrated circuit manufacture; mixed analogue-digital integrated circuits; semiconductor doping; semiconductor technology; gate oxide reliability; gate-drain overlap; high voltage drain extended MOS devices; lightly doped drain MOS; mixed signal performance; process variation; short channel effect; CMOS process; CMOS technology; Degradation; Electrostatic discharge; Hot carriers; Integrated circuit reliability; Integrated circuit technology; MOS devices; Protection; Space technology; Voltage; Drain-extended MOS (DeMOS); hot carrier; input/output; lightly doped drain MOS (LDDMOS); mixed signal; reduced surface field (RESURF); reliability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2036796
