Title :
Fabrication of 24-MHz-Disk Resonators With Silicon Passive Integration Technology
Author :
Sworowski, Marc ; Neuilly, François ; Legrand, Bernard ; Summanwar, Anand ; Philippe, Pascal ; Buchaillot, Lionel
Author_Institution :
NXP Semicond., Innovation Center RF, Caen, France
Abstract :
A new approach for the fabrication of large contour-mode single-crystal silicon resonators has been demonstrated without the use of SOI substrates. Twenty-four-megahertz disk resonators have been built thanks to industrial facilities dedicated to the integration of passive components on silicon and exhibit a good compromise between the quality factor higher than 50 000 and the motional resistance of a few kiloohms.
Keywords :
micromechanical resonators; silicon-on-insulator; SOI; disk resonators; fabrication; frequency 24 MHz; silicon passive integration technology; single-crystal silicon resonators; Bulk micromachining; microelectromechanical systems (MEMS); microresonator; single-crystal silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2034542
