Title :
Experimental Demonstration of Deeply-Etched SiO
Ridge Optical Waveguides and Devices
Author :
Sheng, Zhen ; Yang, Bo ; Yang, Liu ; Hu, Jing ; Dai, Daoxin ; He, Sailing
Author_Institution :
State Key Lab. of Modern Opt. Instrum., Zhejiang Univ., Hangzhou, China
Abstract :
Deeply-etched SiO2 optical ridge waveguides are fabricated and characterized. A detailed discussion of the fabrication process (especially for the deep etching process) is presented. The measured propagation losses for the fabricated waveguides with different core widths range from 0.33 ~ 0.81 dB/mm. The loss is mainly caused by the scattering due to the sidewall roughness. The losses in bending sections are also characterized, which show the possibility of realizing a small bending radius (several tens of microns). 1 Ã N (N = 2, 4, 8) multimode interference couplers based on the deeply-etched SiO2 ridge waveguide are also fabricated and show fairly good performances.
Keywords :
etching; optical couplers; optical fabrication; optical planar waveguides; ridge waveguides; silicon compounds; SiO2; deep etching; multimode interference couplers; optical fabrication; propagation losses; ridge optical waveguides; scattering; sidewall roughness; Electromagnetic waveguides; Etching; Optical buffering; Optical devices; Optical losses; Optical refraction; Optical scattering; Optical sensors; Optical variables control; Optical waveguides; Bending; SiO $_{2}$; deep etching; loss; multimode interference (MMI) coupler; ridge waveguide;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2009.2023610