Half-wave rectification and envelope detection utilising monolithic nanodiamond lateral field emission diode

Successful fabrication and characterisation of a vacuum microelectronic half-wave rectifier and envelope detector using a 2000-fingered nanodiamond lateral field emitter diode with 4 μm inter-electrode spacing is reported. The electrical characterisation demonstrates low turn-on field (~1.4 V/ μm) and high emission current, verified by the Flower-Nordheim plot. The diode is then connected in appropriate circuits to realise half-wave rectification and envelope detection. This approach demonstrates a new way of developing temperature- and radiation-tolerant integrated microelectronics.