• DocumentCode
    1352115
  • Title

    High-power quantum dot superluminescent diode with integrated optical amplifier section

  • Author

    Wang, Z.C. ; Jin, Ping ; Lv, X.Q. ; Li, X.K. ; Wang, Z.G.

  • Author_Institution
    Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China
  • Volume
    47
  • Issue
    21
  • fYear
    2011
  • Firstpage
    1191
  • Lastpage
    1193
  • Abstract
    A 1.1 μm high-power quantum dot superluminescent diode has been fabricated by using a two-section device structure which consists of a superluminescent section and an optical amplifier section. The device exhibits 380 mW output power with 50 nm bandwidth or 260 mW output power with 66 nm bandwidth.
  • Keywords
    integrated optics; semiconductor quantum dots; superluminescent diodes; high-power quantum dot superluminescent diode; integrated optical amplifier section; power 260 mW; power 380 mW; two-section device structure; wavelength 1.1 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.2852
  • Filename
    6047956
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1352115