Title :
1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions
Author :
Coldren, C.W. ; Larson, M.C. ; Spruytte, S.G. ; Harris, J.S.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
fDate :
5/25/2000 12:00:00 AM
Abstract :
Elemental source molecular beam epitaxy has been used to grow vertical cavity laser diodes on GaAs substrates that employ GaInNAs multiquantum well active regions and AlAs-GaAs distributed Bragg reflectors. The laser diodes emitted light at 1200 nm and had threshold current densities of 2.5 kA/cm2 and efficiencies of 0.066 W/A under room temperature pulsed operation.
Keywords :
gallium compounds; 1200 nm; AlAs-GaAs; AlAs/GaAs distributed Bragg reflectors; DBR lasers; GaAs; GaAs substrates; GaAs-based vertical cavity lasers; GaInNAs; GaInNAs MQW active regions; VCSEL; elemental source MBE; molecular beam epitaxy; multiquantum well active regions; room temperature pulsed operation; semiconductor lasers; vertical cavity laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000365
