• DocumentCode
    1352264
  • Title

    1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions

  • Author

    Coldren, C.W. ; Larson, M.C. ; Spruytte, S.G. ; Harris, J.S.

  • Author_Institution
    Solid State & Photonics Lab., Stanford Univ., CA, USA
  • Volume
    36
  • Issue
    11
  • fYear
    2000
  • fDate
    5/25/2000 12:00:00 AM
  • Firstpage
    951
  • Lastpage
    952
  • Abstract
    Elemental source molecular beam epitaxy has been used to grow vertical cavity laser diodes on GaAs substrates that employ GaInNAs multiquantum well active regions and AlAs-GaAs distributed Bragg reflectors. The laser diodes emitted light at 1200 nm and had threshold current densities of 2.5 kA/cm2 and efficiencies of 0.066 W/A under room temperature pulsed operation.
  • Keywords
    gallium compounds; 1200 nm; AlAs-GaAs; AlAs/GaAs distributed Bragg reflectors; DBR lasers; GaAs; GaAs substrates; GaAs-based vertical cavity lasers; GaInNAs; GaInNAs MQW active regions; VCSEL; elemental source MBE; molecular beam epitaxy; multiquantum well active regions; room temperature pulsed operation; semiconductor lasers; vertical cavity laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000365
  • Filename
    848983
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1352264