• DocumentCode
    1352316
  • Title

    Photorefractive response time of B-ion-implanted KNbO3:Rb crystal

  • Author

    Li, Q. ; Xia, Z.H. ; Lu, X.T. ; Wang, F. ; Gong, Q.H. ; Shen, D.Z.

  • Author_Institution
    Nat. Lab. of Solid State Microstruct., Nanjing Univ., China
  • Volume
    36
  • Issue
    11
  • fYear
    2000
  • fDate
    5/25/2000 12:00:00 AM
  • Firstpage
    961
  • Lastpage
    962
  • Abstract
    An experiment investigating the photorefractive response time of Rb-doped KNbO3 crystal has been performed after proton implantation. Only one type of photorefractive grating was observed in this experiment. The experimental results show that B-ion implantation is more effective in speeding up the photorefractive response of KNbO3:Rb crystals than proton implantation. This phenomenon has been analysed in terms of the carrier density.
  • Keywords
    potassium compounds; B-ion implantation; B-ion-implanted; KNbO3:Rb crystal; KNbO3:Rb crystals; KNbO3:Rb,B; Rb-doped KNbO3 crystal; carrier density; photorefractive grating; photorefractive response; photorefractive response time; proton implantation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000689
  • Filename
    848992
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1352316