DocumentCode :
1352702
Title :
Electrothermal modeling of IGBTs: application to short-circuit conditions
Author :
Ammous, Anis ; Ammous, Kaicar ; Morel, Herve ; Allard, Bruno ; Bergogne, Dominique ; Sellami, Faycal ; Chante, Jean Pierre
Author_Institution :
Power Electron. Lab., Ecole Nat. d´´Ingenieurs de Sfax, Tunisia
Volume :
15
Issue :
4
fYear :
2000
fDate :
7/1/2000 12:00:00 AM
Firstpage :
778
Lastpage :
790
Abstract :
This paper discusses the possible estimation of IGBT failure phenomena by means of simulation. The studied destruction mode addresses the large surges, especially the short-circuit of IGBTs. In this case the reason of the device destruction is a thermal runaway. Thus we have developed an electrothermal model of the IGBT. The developed model may be implemented in any circuit simulator featuring a high level description language (SABER, ELDO, SMASH, PACTE etc.). The used electrical model is based on the Hefner model of the IGBT. A bidimensional finite element thermal model is considered. This model has been optimized to give a good trade-off between accuracy and simulation cost. To validate the implemented model, finite element simulations have been performed with the ATLAS two-dimensional (2-D) numerical simulator. The study is completed with the comparison between experimental and simulation results. It is shown that the proposed electrothermal model allows the prediction of the IGBT destruction phases in the case of large surges. So, users of IGBT components have the possibility to estimate, by mean of simulation, the possible failure (due to large surges) of these devices in the case of complex converters. This enables the possibility for developing protection systems for IGBTs without any destructive test
Keywords :
circuit simulation; failure analysis; finite element analysis; insulated gate bipolar transistors; protection; semiconductor device models; short-circuit currents; surges; ATLAS two-dimensional numerical simulator; Hefner model; IGBT; IGBT failure phenomena estimation; bidimensional finite element thermal model; circuit simulator; complex converters; destruction mode; electrical model; electrothermal model; electrothermal modeling; finite element simulations; high level description language; large surges; protection systems; short-circuit conditions; thermal runaway; Circuit simulation; Cost function; Electrothermal effects; Finite element methods; Insulated gate bipolar transistors; Numerical simulation; Predictive models; Surge protection; System testing; Two dimensional displays;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/63.849049
Filename :
849049
Link To Document :
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