Title : 
Bidimensional lifetime control for high-speed low-loss p-i-n rectifiers
         
        
        
            Author_Institution : 
Dept. of Electron. Eng., Naples Univ., Italy
         
        
        
        
        
            fDate : 
7/1/2000 12:00:00 AM
         
        
        
        
            Abstract : 
In the paper a lifetime control technique able to control device carrier lifetime not only in the axial direction, but also in the longitudinal direction (two-dimensional (2-D) lifetime control), is analyzed. Static and dynamic losses of p-i-n diode using 2-D lifetime control are studied through mixed mode circuit-device simulations. It is shown that the 2-D technique gives a better tradeoff between static and dynamic behavior with respect to electron irradiation technique. The comparison with axial lifetime control shows that, notwithstanding similar performances achieved using the two techniques, 2-D lifetime control provides greater design flexibility
         
        
            Keywords : 
carrier lifetime; circuit simulation; electron beam effects; ion implantation; losses; p-i-n diodes; rectifying circuits; semiconductor doping; 2-D lifetime control; axial direction; bidimensional lifetime control; carrier lifetime control; charge carrier lifetime; design flexibility; dynamic losses; electron irradiation technique; high-speed low-loss p-i-n rectifiers; longitudinal direction; mixed mode circuit-device simulations; p-i-n diode; semiconductor device ion implantation; semiconductor diode switches; static losses; Charge carrier lifetime; Circuits; Electrons; Optimal control; P-i-n diodes; PIN photodiodes; Rectifiers; Schottky diodes; Semiconductor diodes; Two dimensional displays;
         
        
        
            Journal_Title : 
Power Electronics, IEEE Transactions on