Title :
Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
Author :
Stintz, A. ; Liu, G.T. ; Li, H. ; Lester, L.F. ; Malloy, K.J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fDate :
6/1/2000 12:00:00 AM
Abstract :
The wavelength of InAs quantum dots in an In/sub 0.15/Ga/sub 0.85/As quantum-well (DWELL) lasers grown on a GaAs substrate has been extended to 1.3-μm. The quantum dot lasing wavelength is sensitive to growth conditions and sample thermal history resulting in blue shifts as much as 73 nm. The room temperature threshold current density is 42.6 A cm/sup -2/ for 7.8-mm cavity length cleaved facet lasers under pulsed operation.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; semiconductor quantum dots; spectral line shift; 1.3 mum; 7.8 nm; DWELL structure; GaAs; GaAs substrate; In/sub 0.15/ Ga/sub 0.85/As quantum-well laser; In/sub 0.15/Ga/sub 0.85/As; InAs; InAs quantum-dot lasers; blue shifts; cavity length cleaved facet lasers; dots-in-a-well structure; growth conditions; low-threshold current density; pulsed operation; quantum dot lasing wavelength; room temperature threshold current density; thermal history; Current density; Gallium arsenide; History; Optical design; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Substrates; Testing; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
