Title :
Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes
Author :
Borchert, B. ; Egorov, A.Y. ; Illek, S. ; Riechert, H.
Author_Institution :
Corp. Res. Photonic, Infineon Technol., Munich, Germany
fDate :
6/1/2000 12:00:00 AM
Abstract :
Rapid progress has been made in the growth of GaInNAs-GaAs by solid source molecular beam epitaxy, leading to significant improvements of such heterostructures for 1.3-μm wavelength laser emission. We report on growth, device fabrication and characteristics of ridge-waveguide lasers in this material system. Performance data of these devices (emission at /spl lambda/=1.29 μm, threshold currents of 16 mA, slope efficiencies of 0.35 W/A per facet, and continuous-wave (CW) operation at 100/spl deg/C) prove that this new material can successfully compete with the well matured InGaAsP-InP system. Furthermore, the very first small-signal modulation measurement results of laser diodes in this novel material-system as well as first ageing results are presented.
Keywords :
III-V semiconductors; ageing; electro-optical modulation; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; optical fabrication; optical testing; quantum well lasers; ridge waveguides; semiconductor device testing; semiconductor growth; waveguide lasers; 1.29 mum; 1.29-/spl mu/m GaInNAs ridge-waveguide laser diodes; 1.3 mum; 1.3-/spl mu/m wavelength laser emission; 100 C; 16 mA; CW operation; GaInNAs; GaInNAs-GaAs; InGaAsP-InP system; ageing results; continuous-wave operation; device fabrication; dynamic characteristics; heterostructures; ridge-waveguide lasers; slope efficiencies; small-signal modulation measurement results; solid source molecular beam epitaxy; static characteristics; threshold currents; Diode lasers; Distributed feedback devices; Gallium arsenide; Gas lasers; Molecular beam epitaxial growth; Optical materials; Solid lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
