Title :
Low-temperature sensitive, compressively strained InGaAsP active (/spl lambda/=0.78-0.85 μm) region diode lasers
Author :
Tansu, N. ; Zhou, D. ; Mawst, L.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fDate :
6/1/2000 12:00:00 AM
Abstract :
This letter reports comparative studies between (Al)GaAs versus InGaAsP active region edge-emitting semiconductor lasers for emission wavelength in the IR regime (/spl lambda/=0.78-0.85 μm). High characteristic temperature T0(200 K) and T1 (450 K) edge-emitting diode lasers have been demonstrated by using the compressively strained (/spl Delta/a/a=0,6%) Al-free (InGaAsP) active region with an emission wavelength of 0.85 μm. The high T0 and T1 a result of low active-layer carrier leakage, will be beneficial for high-temperature and high-power operation. Implementation for InGaAsP-active VCSEL´s with compressively strained InGaAsP-active layers and conventional DBR´s is also discussed.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; semiconductor lasers; sensitivity; surface emitting lasers; 0.78 to 0.85 mum; 200 K; 450 K; AlGaAs; AlGaAs active region edge-emitting semiconductor lasers; IR regime; InGaAsP; InGaAsP active region diode lasers; InGaAsP active region edge-emitting semiconductor lasers; InGaAsP-active VCSEL; compressively strained; compressively strained InGaAsP-active layers; edge-emitting diode lasers; emission wavelength; high characteristic temperature; high-power operation; high-temperature; low active-layer carrier leakage; low-temperature sensitivity; Degradation; Diode lasers; Optical design; Optical materials; Optical sensors; Quantum well devices; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
