Title :
Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers
Author :
Nishiyama, N. ; Arai, M. ; Shinada, S. ; Suzuki, K. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fDate :
6/1/2000 12:00:00 AM
Abstract :
We propose a novel vertical-cavity surface emitting laser (VCSEL) with Al(Ga)As multi-oxide layer (MOX) structure for the purpose of enlarging window aperture maintaining single transverse mode operation. We have fabricated an InGaAs-GaAs VCSEL with the proposed MOX structure formed on GaAs (311)B substrate. We have performed a numerical simulation to investigate single-mode behavior of the proposed structure and showed a possibility of single-mode VCSEL´s with a large active area. We have fabricated an 11-μm current aperture 960-nm wavelength VCSEL with this MOX structure. The threshold current and voltage were 1.0 mA and 2.0 V, respectively, which are comparable to those of conventional oxide VCSELs. In 8-μm aperture, single-mode operation was maintained with a driving current up to four times the threshold.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; optical fabrication; oxidation; semiconductor lasers; surface emitting lasers; 1 mA; 2 V; 960 nm; AlGaAs; AlGaAs multi-oxide layer structure; GaAs; GaAs (311)B substrate; InGaAs-GaAs; InGaAs-GaAs VCSEL; MOX structure; VCSEL; driving current; large active area; multi-oxide layer structure; numerical simulation; single transverse mode operation; single-mode VCSEL; single-mode behavior; single-mode operation; threshold current; vertical-cavity surface-emitting lasers; voltage; window aperture; Apertures; Gallium arsenide; Laser modes; Optical devices; Optical scattering; Optical surface waves; Oxidation; Parasitic capacitance; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
