Title :
Short-pulse generation with broad-band tunability from semiconductor lasers in an external ring cavity
Author :
Lee, Bor-Lin ; Lin, Ching-Fuh
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2000 12:00:00 AM
Abstract :
Short optical pulses are generated by actively mode locking semiconductor lasers in an external ring cavity with a very broad tuning range from 795 to 857 nm. The wide tunability is possible because the gain bandwidth is broadened by the use of asymmetric dual quantum wells for the semiconductor laser material. Assuming a Gaussian shape, the generated pulses have pulsewidths of 13-21 ps and spectral widths of 24.5 /spl Aring/ for the tuning range. The mode-locked spectrum contains almost no amplified spontaneous emission noise.
Keywords :
laser cavity resonators; laser noise; laser transitions; laser tuning; optical pulse generation; quantum well lasers; semiconductor device noise; superradiance; 13 to 21 ps; 795 to 857 nm; Gaussian shape; actively mode locking semiconductor lasers; amplified spontaneous emission noise; asymmetric dual quantum wells lasers; broad-band tunability; external ring cavity; gain bandwidth; mode-locked spectrum; semiconductor lasers; short-pulse generation; spectral widths; very broad tuning range; wide tunability; Laser mode locking; Laser tuning; Optical pulse generation; Optical pulses; Pulse amplifiers; Pulse shaping methods; Quantum well lasers; Ring lasers; Semiconductor lasers; Space vector pulse width modulation;
Journal_Title :
Photonics Technology Letters, IEEE
