Low-power all-optical gate based on sum frequency mixing in APE waveguides in PPLN

Author

Parameswaran, K.R. ; Fujimura, M. ; Chou, M.H. ; Fejer, M.M.

Author_Institution

Edward L. Ginzton Lab., Stanford Univ., CA, USA

Volume

12

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

654

Lastpage

656

Abstract

We present an all-optical gate implemented in periodically poled lithium niobate (PPLN) (LiNbO₃). Efficient mixing is achieved by using a phase-matched guided-wave interaction. A control wave at 1.537 μm is used to gate a signal at 1.552 μm, where a control power of 185 mW is sufficient to achieve 96% depletion of a low-power signal. A simple switch configuration is described whereby high-contrast low-power all-optical switching can be performed.

Keywords

annealing; dielectric polarisation; ion exchange; optical frequency conversion; optical logic; optical phase matching; optical switches; optical waveguides; 1.537 mum; 1.552 mum; 185 mW; APE waveguides; LiNbO/sub 3/; PPLN; control power; control wave; high-contrast low-power all-optical switching; low-power all-optical gate; low-power signal; periodically poled lithium niobate; phase-matched guided-wave interaction; sum frequency mixing; switch configuration; Communication switching; Fiber nonlinear optics; Frequency conversion; High speed optical techniques; Lithium niobate; Nonlinear optical devices; Optical fiber communication; Optical frequency conversion; Optical mixing; Optical waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.849074

Filename

849074