Title :
CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology
Author :
Dainesi, P. ; Küng, A. ; Chabloz, M. ; Lagos, A. ; Flückiger, Ph ; Ionescu, A. ; Fazan, P. ; Declerq, M. ; Renaud, Ph ; Robert, Ph.
Author_Institution :
Lab. de Metrol., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
6/1/2000 12:00:00 AM
Abstract :
We present a fully integrated Mach-Zehnder interferometer in silicon-on-insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative design makes this device completely compatible with CMOS technology allowing electronic functions to be integrated on the same substrate. Measurement results, limitations due to thermooptic effect and absorption related to charge injection together with further improvements are discussed.
Keywords :
CMOS integrated circuits; Mach-Zehnder interferometers; electro-optical modulation; integrated optoelectronics; refractive index; silicon-on-insulator; thermo-optical effects; 10 MHz; CMOS compatible fully integrated Mach-Zehnder interferometer; CMOS technology; SOI technology; absorption; charge injection; electronic functions; index of refraction modulation; innovative design; plasma dispersion effect; silicon-on-insulator technology; substrate; thermooptic effect; Absorption; Bandwidth; CMOS technology; Charge measurement; Current measurement; Dispersion; Plasma devices; Plasma measurements; Silicon on insulator technology; Thermooptic effects;
Journal_Title :
Photonics Technology Letters, IEEE
