Title :
Lifetime Modeling of ZnO Thin-Film Transistors
Author :
Redinger, David H.
Author_Institution :
Corp. Res. Mater. Lab., 3M Co., St. Paul, MN, USA
Abstract :
A novel method of predicting the lifetime of polycrystalline metal-oxide thin-film transistors (TFTs) is presented. The measured threshold-voltage shift is correlated to the creation of defect (trap) states within the semiconductor grain boundaries. Once this relationship is established, conventional threshold-voltage shift and polycrystalline transport models can be used to predict the TFT current with time. Measured bias-stress data taken from ZnO TFTs fabricated on flexible polyethylene naphthalate substrates are accurately fit using this model.
Keywords :
semiconductor device models; thin film transistors; ZnO; lifetime modeling; polycrystalline metal-oxide thin-film transistors; semiconductor grain boundaries; thin film transistors; threshold-voltage shift; Active matrix technology; Current measurement; Degradation; Life estimation; Semiconductor device measurement; Thin film transistors; Threshold voltage; Accelerated testing; active-matrix displays; degradation; flexible; thin-film transistors (TFTs); threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2081231
