DocumentCode :
1353075
Title :
Comments on "1.88- 
1650-V Normally on 4H-SiC TI-VJFET
Author :
Veliadis, Victor
Author_Institution :
Northrop Grumman Electron. Syst., Linthicum, MD, USA
Volume :
57
Issue :
12
fYear :
2010
Firstpage :
3540
Lastpage :
3543
Abstract :
The discussion section of paper “1.88-mΩ·cm2 1650-V Normally on 4H-SiC TI-VJFET” which appeared in IEEE Transactions on Electron Devices, vol. 55, no. 8, August 2008, offers a comparative analysis between TI-VJFETs fabricated at USCI/Rutgers and VJFETs (SITs) fabricated at Northrop Grumman Electronic Systems (NGES) for power switching applications. I have a number of issues with this analysis which I wish to highlight. In addition, this paper claims VJFET performance records, which are dubious as they are based on on-resistance values obtained under bipolar operation and on blocking-voltages quoted at unspecified drain-current densities.
Keywords :
junction gate field effect transistors; silicon compounds; wide band gap semiconductors; 4H-SiC TI-VJFET; SiC; bipolar operation; drain-current density; on-resistance value; power switching application; silicon carbide; vertical-junction field-effect transistor; Current control; Electric potential; JFETs; Silicon carbide; Junction field effect transistors (JFETs); normally off; normally on; silicon carbide (SiC); vertical channel;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2079172
Filename :
5604309
Link To Document :
