Low-Frequency Three-Terminal Charge Pumping Applied to Silicon Nanowire Field-Effect Transistors

Author

Sarpatwari, K. ; Awadelkarim, O.O. ; Passmore, L.J. ; Ho, T.T. ; Kuo, M.W. ; Dellas, N.S. ; Mayer, T.S. ; Mohney, S.E.

Author_Institution

Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA

Volume

10

Issue

4

fYear

2011

fDate

7/1/2011 12:00:00 AM

Firstpage

871

Lastpage

874

Abstract

We report on the application of the charge-pumping (CP) technique to vapor-liquid-solid grown silicon nanowire (SiNW) transistors. We use an Ω gate-nanowire field-effect-transistor (OG-NWFET) structure, and we employ a modified CP method that is applicable to three terminal devices. The trap density from CP measurements correlates very well with the results obtained from subthreshold slope measurements. The relatively high trap densities measured and the observed saturation of the CP signal with the measurement frequency are discussed in terms of device dimensions and geometry.

Keywords

elemental semiconductors; field effect transistors; nanowires; silicon; silicon compounds; Ω gate-nanowire field-effect-transistor; SiO₂-Si; device dimensions; device geometry; high trap densities; low-frequency three-terminal charge pumping; measurement frequency; silicon nanowire field-effect transistors; subthreshold slope measurements; trap density; vapor-liquid-solid grown silicon nanowire transistors; Charge pumps; Current measurement; Density measurement; Electron traps; Frequency measurement; Logic gates; Silicon; Charge pumping (CP); nanowire field-effect transistors (NWFET);

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2010.2087392

Filename

5604321