Scanners for Ferroelectric Memory Capacitors

Many references are available on the properties and characteristics of ferroelectric materials and their memory application.1-3 The purpose of this paper is to present several scanning systems by which binary information can be stored and recalled from ferroelectric capacitor configurations. The circuitry to be described here was originally designed for testing of ferroelectric elements and employs an ordered or nonrandom scanning pattern. Most of the circuitry presented is, however, adaptable to random access application.