• DocumentCode
    1353245
  • Title

    From circuit miniaturization to the scalable IC

  • Author

    Murphy, Bernard T. ; Haggan, Douglas E. ; Troutman, William W.

  • Author_Institution
    Lucent Technol. Bell Labs., Murray Hill, NJ, USA
  • Volume
    88
  • Issue
    5
  • fYear
    2000
  • fDate
    5/1/2000 12:00:00 AM
  • Firstpage
    691
  • Lastpage
    703
  • Abstract
    For more than three decades, the main driving force behind the integrated circuit (IC) revolution has been the steady scaling downwards of their lithographic design rules. It may therefore come as a surprise to those not familiar with their earlier history that the original IC did not, and actually could not, embrace the scaling concept. Instead, the early work was intended to achieve a revolution in circuit miniaturization by bringing all circuit components down to the same tiny size as the transistor. For these circuits to become truly scalable ICs, new transistor structures had to be invented and adapted to IC needs. Until this happened the cost-effectiveness of the IC was highly controversial. Five years after the IC was invented, plans were being put in place by IBM and AT&T to utilize flipchip transistor technology rather than ICs. But these, like the original ICs, were also unscalable, and consequently lost out to a new generation of ICs that were scalable. Two revolutions were driven by the subsequent evolution of design rules; first TTL/minicomputers, and then MOS/microcomputers. K. Marx proved disastrously wrong in the political arena, but his aphorism "evolution carried far enough becomes revolution" fits IC history like a glove.
  • Keywords
    history; integrated circuit design; integrated circuit technology; lithography; IC history; circuit miniaturization; design rules; flipchip transistor technology; lithographic design rules; scalable IC; transistor structures; Bipolar transistor circuits; CMOS logic circuits; FETs; History; Integrated circuit technology; Logic circuits; Logic devices; Microcomputers; Power dissipation; Silicon carbide;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/5.849170
  • Filename
    849170