DocumentCode
1353276
Title
Simultaneous and independent semiconductor laser operation at 1.3 and 1.55 μm produced by focused ion beam etching
Author
Gardiner, C.K. ; Kozlowski, D.A. ; England, J.M.C. ; Plumb, R.G.S.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
32
Issue
20
fYear
1996
fDate
9/26/1996 12:00:00 AM
Firstpage
1891
Lastpage
1892
Abstract
The authors show that, by introducing a single focused ion beam etched cavity into the 1.3 μm bandgap material between the phase tuning and sampled grating sections of a three section DBR laser, sufficient feedback is produced to enable stimulated emission at 1.3, as well as 1.55 μm. The etched cavity also increases the inter-contact resistance
Keywords
contact resistance; distributed feedback lasers; focused ion beam technology; laser cavity resonators; laser feedback; optical fabrication; semiconductor lasers; sputter etching; stimulated emission; 1.3 micron; 1.55 micron; feedback; focused ion beam etched cavity; independent operation; inter-contact resistance; phase tuning; sampled grating; semiconductor laser; simultaneous operation; stimulated emission; three section DBR laser; two-wavelength operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961593
Filename
535197
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