• DocumentCode
    1353297
  • Title

    Investigation of a Class-J Power Amplifier With a Nonlinear C_{\\rm out} for Optimized Operation

  • Author

    Moon, Junghwan ; Kim, Jungjoon ; Kim, Bumman

  • Author_Institution
    Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
  • Volume
    58
  • Issue
    11
  • fYear
    2010
  • Firstpage
    2800
  • Lastpage
    2811
  • Abstract
    This paper presents the operation principle of Class-J power amplifiers (PAs) with linear and nonlinear output capacitors (Couts). The efficiency of a Class-J amplifier is enhanced by the nonlinear capacitance because of the harmonic generation from the nonlinear Cout, especially the second-harmonic voltage component. This harmonic voltage allows the reduction of the phase difference between the fundamental voltage and current components from 45° to less than 45° while maintaining a half-sinusoidal shape. Therefore, a Class-J amplifier with the nonlinear Cout can deliver larger output power and higher efficiency than with a linear Cout. As a further optimized structure of the Class-J amplifier, the saturated PA, a recently-reported amplifier in our group, is presented. The phase difference of the proposed PA is zero. Like the Class-J amplifier, the PA uses a nonlinear Cout to shape the voltage waveform with a purely resistive fundamental load impedance at the current source, which enhances the output power and efficiency. The PA is favorably compared to the Class-J amplifier in terms of the waveform, load impedance, output power, and efficiency. These operations are described using both the ideal and real models of the transistor in Agilent Advanced Design System. A highly efficient amplifier based on the saturated PA is designed by using a Cree GaN HEMT CGH40010 device at 2.14 GHz. It provides a power-added efficiency of 77.3% at a saturated power of 40.6 dBm (11.5 W).
  • Keywords
    III-V semiconductors; capacitors; gallium compounds; harmonic generation; high electron mobility transistors; power amplifiers; Agilent Advanced Design System; Cree GaN HEMT CGH40010 device; GaN; class-J power amplifier; frequency 2.14 GHz; harmonic generation; linear output capacitor; nonlinear capacitance; nonlinear output capacitor; power 11.5 W; power-added efficiency; second-harmonic voltage component; transistor; Capacitance; Capacitors; Frequency conversion; Harmonic analysis; Impedance; Load modeling; Power generation; Class-J; efficiency; nonlinear output capacitor; power amplifier; saturated amplifier;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2010.2077970
  • Filename
    5604342